DMP1080UCB4 document number: ds35827 rev. 4 - 2 1 of 6 www.diodes.com december 2012 ? diodes incorporated DMP1080UCB4 p-channel enhancem ent mode mosfet product summary v (br)dss r ds(on) i d t a = +25c -12v 80m ? @ v gs = -4.5v -3.3a 93m ? @ v gs = -2.5v -3.0a description this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. applications ? battery management ? load switch ? battery protection features ? low q g & q gd ? small footprint ? low profile 0.62mm height ? esd protected up to -3kv ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: u-wlb1010-4 ? terminal connections: see diagram below ? weight: 0.0018 grams (approximate) ordering information (note 4) part number case packaging DMP1080UCB4-7 u-wlb1010-4 3000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com for more in formation about diodes incorpor ated?s definitions of halogen- and antimony-free, "gree n" and lead-free. ? 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm br omine, <900ppm chlorine (<1500ppm t otal br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com. marking information date code key year 2011 2012 2013 2014 2015 2016 2017 code y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d u-wlb1010-4 top view equivalent circuit esd protected to 3kv s d g d bw = product type marking code ym = date code marking y = year (ex: x = 2010) m = month (ex: 9 = september) bw ym
DMP1080UCB4 document number: ds35827 rev. 4 - 2 2 of 6 www.diodes.com december 2012 ? diodes incorporated DMP1080UCB4 maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value unit drain-source voltage v dss -12 v gate-source voltage v gss -6 v continuous drain current (note 5) v gs = -4.5v steady state t a = +25c t a = +70c i d -3.3 -2.7 a continuous drain current (note 5) v gs = -2.5v steady state t a = +25c t a = +70c i d -3.0 -2.4 a pulsed drain current (note 6) i dm 20 a thermal characteristics characteristic symbol value unit power dissipation (note 7) p d 0.82 w thermal resistance, junction to ambient @t a = +25c (note 7) r ja 150 c/w thermal resistance, junction to case @t c = +25c (note 7) r jc 42.66 c/w power dissipation (note 5) p d 1.59 w thermal resistance, junction to ambient @t a = +25c (note 5) r ja 80.29 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8) drain-source breakdown voltage bv dss -12 - - v v gs = 0v, i d = -250 a gate-source breakdown voltage bv gss -6.0 - - v v ds = 0v, i g = -250 a zero gate voltage drain current t j = +25c i dss - - -1 a v ds = -9.6v, v gs = 0v gate-source leakage i gss - - -100 na v gs = -6v, v ds = 0v on characteristics (note 8) gate threshold voltage v gs ( th ) -0.4 -0.6 -1.0 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) - 65 80 m v gs = -4.5v, i d = -500ma - 77 93 v gs = -2.5v, i d = -500ma - 108 130 v gs = -1.5v, i d = -500ma forward transfer admittance |y fs | - 4 - s v ds = -6v, i d = -500ma diode forward voltage v sd -0.6 -1.0 v v gs = 0v, i s = -500ma reverse recovery charge q r r - 2.0 - nc v dd = ?4.0v, i f = ?0.5a, di/dt =100a/ s reverse recovery time t r r - 9.5 - ns dynamic characteristics (note 9) input capacitance c iss - 213 350 pf v ds = -6v, v gs = 0v, f = 1.0mhz output capacitance c oss - 119 250 reverse transfer capacitance c rss - 54.4 90 total gate charge q g - 2.5 5 nc v gs = -4.5v, v ds = -6v, i d = -500ma gate-source charge q g s - 0.3 - gate-drain charge q g d - 0.6 - gate charge at vth q g ( th ) - 0.15 - turn-on delay time t d ( on ) - 16.7 - ns v ds = -6v, v gs = -2.5v, r g = 20 ? , i d = -500ma turn-on rise time t r - 20.6 - turn-off delay time t d ( off ) - 38.4 - turn-off fall time t f - 28.4 - notes: 5. device mounted on fr4 material with 1-inch 2 (6.45-cm 2 ), 2-oz. (0.071-mm thick) cu. 6. repetitive rating, pulse width limited by junction temperature. 7. device mounted on fr-4 pcb with minimum recommended pad layout, single sided. 8. short duration pulse test used to minimize self-heating effect. 9. guaranteed by design. not subject to production testing.
DMP1080UCB4 document number: ds35827 rev. 4 - 2 3 of 6 www.diodes.com december 2012 ? diodes incorporated DMP1080UCB4 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 0.5 1.0 1.5 2.0 2.5 3.0 -v , drain -source voltage (v) fig. 1 typical output characteristics ds -i , d r ain c u r r en t (a) d v= -1.0v gs v= -1.2v gs v= -1.5v gs v= -2.0v gs v= -2.5v gs v= -3.0v gs v= -4.0v gs v= -4.5v gs v= -6.0v gs 0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 -i , d r ai n c u r r e n t (a) d -v , gate-source voltage (v) gs fig. 2 typical transfer characteristics t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a v = -5.0v ds 0.02 0.04 0.06 0.08 0.12 0.14 0.16 0.18 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.10 0.20 0 r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) -i , drain source current (a) fig. 3 typical on-resistance vs. drain current and gate voltage d v = -6.0v gs v = -4.5v gs v = -2.5v gs v = -1.5v gs 0.04 0.06 0.08 01 2 3 45 0.10 -i , drain source current (a) fig. 4 typical on-resistance vs. drain current and temperature d r , d r ain-s o u r ce o n- r esistance ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125 c a t = 150 c a v= -4.5v gs 0.6 0.8 1.2 1.4 1.6 1.0 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j fig. 5 on-resistance variation with temperature r , d r ain-s o u r c e on-resistance (normalized) ds(on) v = -4.5v i = -2.0a gs d v = -2.5v i = -1.5a gs d 0.02 0.04 0.06 0.08 0.12 0.14 0.16 0.10 0 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j fig. 6 on-resistance variation with temperature r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) v= -4.5v i= a gs d -2.0 v=5v i= a gs d -2. -1.5
DMP1080UCB4 document number: ds35827 rev. 4 - 2 4 of 6 www.diodes.com december 2012 ? diodes incorporated DMP1080UCB4 0.2 0.4 0.6 0.8 1.2 1.0 0 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) fig. 7 gate threshold variation vs. ambient temperature a v, g a t e t h r es h o ld v o l t a g e (v) gs(th) -i = 1ma d -i = 250a d 0 1 2 3 4 5 0 0.3 0.6 0.9 1.2 1.5 -v , source-drain voltage (v) fig. 8 diode forward voltage vs. current sd -i , s o u r c e c u r r e n t (a) s t= 25c a t= -55c a t= 85c a t= 125c a t= 150c a 0 1 2 3 4 5 6 7 8 9 10 11 12 0.1 10 100 1,000 100,000 -i , leaka g e c u r r en t (na) dss 10,000 1 -v , drain-source voltage (v) fig. 9 typical drain-source leakage current vs. voltage ds t = 150c a t = 125c a t = 85c a t = 25c a 0.1 1 10 100 -v , drain-source voltage (v) fig. 10 soa, safe operation area ds 0.01 0.1 1 10 100 -i , d r ain c u r r en t (a) d t = 150c t = 25c j(max) a v = -6v single pulse gs dut on 1 * mrp board r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10s w 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration times (sec) fig. 11 transient thermal resistance r (t) = r(t) * r r = 153c/w duty cycle, d = t1/ t2 ? ja ja ja 0.001 0.01 0.1 r(t), t r ansien t t h e r mal r esis t an c e 1 d = 0.7 d = 0.9 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse
DMP1080UCB4 document number: ds35827 rev. 4 - 2 5 of 6 www.diodes.com december 2012 ? diodes incorporated DMP1080UCB4 package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. u-wlb1010-4 dim min max typ d 0.95 1.05 1.00 e 0.95 1.05 1.00 a ? 0.62 ? a2 ? ? 0.38 b 0.25 0.35 0.30 e ? ? 0.50 sd ? ? 0.25 se ? ? 0.25 all dimensions in mm dimensions value (in mm) c 0.50 d 0.25 c c ?d e d a2 a sd e se e 4x-? b
DMP1080UCB4 document number: ds35827 rev. 4 - 2 6 of 6 www.diodes.com december 2012 ? diodes incorporated DMP1080UCB4 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2012, diodes incorporated www.diodes.com
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